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Long indium-rich InGaAs nanowires by SAG-HVPE.

Emmanuel Chereau1, Gabin Grégoire1, Geoffrey Avit1

  • 1Université Clermont Auvergne, CNRS, Clermont Auvergne INP, Institut Pascal, F-63000 Clermont-Ferrand, France.

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Summary

Researchers successfully grew indium gallium arsenide (InGaAs) nanowires (NWs) using hydride vapor phase epitaxy (HVPE). This method achieved high growth rates and high aspect ratio InGaAs NW arrays, demonstrating HVPE

Keywords:
HVPEInGaAsepitaxygrowthnanowiresselective area growth

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Indium gallium arsenide (InGaAs) nanowires (NWs) are crucial for advanced electronic and optoelectronic devices.
  • Selective area growth techniques are essential for controlled fabrication of NW arrays.
  • Hydride vapor phase epitaxy (HVPE) offers potential for high-throughput semiconductor nanostructure synthesis.

Purpose of the Study:

  • To demonstrate the selective area growth of InGaAs NWs on GaAs (111)B substrates using HVPE.
  • To characterize the growth rate, composition, and crystal structure of the synthesized InGaAs NWs.
  • To evaluate the suitability of HVPE for producing high aspect ratio InGaAs NW arrays.

Main Methods:

  • Selective area epitaxy using hydride vapor phase epitaxy (HVPE).
  • Growth on Gallium Arsenide (GaAs) (111)B substrates.
  • Compositional analysis via energy dispersive X-ray spectroscopy (EDX).
  • Optical characterization using photoluminescence (PL) spectroscopy.
  • Crystal structure determination using transmission electron microscopy (TEM).

Main Results:

  • Achieved selective area growth of InGaAs NWs with a high growth rate exceeding 50 μm h⁻¹.
  • Obtained NWs with a high aspect ratio and an average indium composition of 84% (EDX), consistent with 78% (PL).
  • Identified random stacking faults in the NWs, indicative of zinc-blende/wurtzite polytypism via TEM analysis.

Conclusions:

  • HVPE is a viable technique for the selective area growth of high aspect ratio InGaAs NW arrays.
  • The study confirms the capability of HVPE for producing InGaAs NWs with controlled composition and structure.
  • This demonstrates potential for scalable manufacturing of NW-based devices.