Related Experiment Video
Updated: Jul 4, 2026

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Filling factor dependence of the fractional quantum Hall effect gap
V S Khrapai1, A A Shashkin, M G Trokina
1Institute of Solid State Physics, Chernogolovka, Moscow District, Russia.
Abstract:
We directly measure the chemical potential jump in the low-temperature limit when the filling factor traverses the nu=1/3 and nu=2/5 fractional gaps in two-dimensional (2D) electron system in GaAs/AlGaAs single heterojunctions. In high magnetic fields B, both gaps are linear functions of B with slopes proportional to the inverse fraction denominator, 1/q. The fractional gaps close partially when the Fermi level lies outside. An empirical analysis indicates that the chemical potential jump for an ideal 2D electron system, in the highest accessible magnetic fields, is proportional to q(-1) B(1/2).
More Related Videos
05:39Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
08:44Measurements of Long-range Electronic Correlations During Femtosecond Diffraction Experiments Performed on Nanocrystals of Buckminsterfullerene
Published on: August 22, 2017
Related Concept Videos
The Hall Effect
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Imperfections in Crystal Structure: Stoichiometric Point Defects
Atomic Nuclei: Nuclear Spin State Population Distribution
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Interpreting ¹H NMR Signal Splitting: The (n + 1) Rule