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20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

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Diode-pumped, actively internal-Q-switched Nd:MgO:PPLN laser.

Y H Chen¹, Y C Chang, C H Lin

¹Department of Optics and Photonics, National Central University, Jhongli 320, Taiwan. yhchen@dop.ncu.edu.tw

|June 11, 2008

Summary

We developed a novel laser system using a special crystal for electro-optic Q-switching. This system achieves high peak power pulses, demonstrating efficient laser performance for various applications.

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Area of Science:

Laser Physics
Materials Science

Background:

Laser systems require efficient switching mechanisms for pulsed operation.
Periodically poled crystals offer unique nonlinear optical properties.

Purpose of the Study:

To demonstrate a laser-diode-pumped, internally Q-switched laser system.
To utilize a periodically poled Nd:MgO:LiNbO3 (Nd:MgO:PPLN) crystal as an integrated Q-switch.

Main Methods:

Fabrication of a 17-mm long Nd:MgO:PPLN crystal with a 12-mm polarization-mode quasi-phase-matching (PM QPM) grating.
Employing the PM QPM grating section as an electro-optic Q-switch.
Driving the Q-switch with a 260-V voltage pulse train at 5 kHz.

Main Results:

Achieved laser pulses with energy exceeding 2.45 μJ.
Obtained a pulse width of approximately 28 ns.
Generated a laser peak power of approximately 88 W at 1.085 μm.

Conclusions:

Successfully demonstrated an internally Q-switched laser system using Nd:MgO:PPLN.
The integrated Q-switch design shows promise for compact and efficient pulsed laser generation.
The system operates effectively at low absorbed diode pump power (0.61 W) with 2% output coupling.