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Updated: Jul 4, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
Strong optical injection-locked semiconductor lasers demonstrating > 100-GHz resonance frequencies and 80-GHz
Erwin K Lau1, Xiaoxue Zhao, Hyuk-Kee Sung
1Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California 94720, USA. elau@eecs.berkeley.edu
Abstract:
By using strong optical injection locking, we report resonance frequency enhancement in excess of 100 GHz in semiconductor lasers. We demonstrate this enhancement in both distributed feedback (DFB) lasers and vertical-cavity surface-emitting lasers (VCSELs), showing the broad applicability of the technique and that the coupling Q is the figure-of-merit for resonance frequency enhancement. We have also identified the key factors that cause low-frequency roll-off in injection-locked lasers. By increasing the slave laser's DC current bias, we have achieved a record intrinsic 3-dB bandwidth of 80 GHz in VCSELs.

