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Updated: Jul 4, 2026

Spectral and Angle-Resolved Magneto-Optical Characterization of Photonic Nanostructures
Published on: November 21, 2019
A polarization-modulation method for the near-field mapping of laterally grown InGaN samples
Ruggero Micheletto1, Daisuke Yamada, Maria Allegrini
1Department of Electronic Science, Kyoto University, Graduate School of Engineering, Nishigyo-ku, Katsura, 615-8510 Kyoto, Japan.
Abstract:
Epitaxial Laterally overgrown (ELOG) InGaN materials are investigated using a polarization modulated scanning near-field optical microscope. The authors found that luminescence has spatial inhomogeneities and it is partially polarized. Near-field photoluminescence shows polarization phase fluctuation up to 45 degrees over adjacent domains. These results point toward the existence of asymmetries in carrier confinement due to structural anisotropic strain within the framework of the ELOG structure.

