Static gain saturation in quantum dot semiconductor optical amplifiers
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Updated: Jul 4, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Christian Meuer1, Jungho Kim, Matthias Laemmlin
1Institut fuer Festkoerperphysik, Technische Universitaet Berlin, EW 5-2, Hardenbergstr. 36, 10623 Berlin, Germany. chmeuer@sol.physik.tu-berlin.de
Abstract:
Measurements of saturated amplified spontaneous emission-spectra of quantum dot semiconductor optical amplifiers demonstrate efficient replenishment of the quantum-dot ground state population from excited states. This saturation behavior is perfectly modeled by a rate equation model. We examined experimentally the dependence of saturation on the drive current and the saturating optical pump power as well as on the pump wavelength. A coherent noise spectral hole is observed with which we assess dynamical properties and propose optimization of the SOA operating parameters for high speed applications.
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