Effects of humidity on nano-oxidation of silicon nitride thin film

Effects of humidity on nanometer-scale oxidation of silicon nitride thin film using atomic force microscope in contact mode are studied at various values of relative humidity (RH) (30-70%). The shape of oxide protrusion is determined by the concentration of oxyanions under the tip apex and oxyanions diffusion laterally on the surface. At low RH (or= 60%), the effective electric field is decreased because of the electron being trapped in the oxide and oxyanions accumulating on the oxide surface.