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Updated: Jul 4, 2026

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A quantitative analytical model for static dipolar disorder broadening of the density of states at organic
Tim Richards1, Matthew Bird, Henning Sirringhaus
1Cavendish Laboratory, JJ Thompson Avenue, Cambridge CB3 0HE, United Kingdom.
Abstract:
Understanding the electronic structure of organic-organic heterointerfaces is crucial for many device applications of organic semiconductors. Here we have developed a simple analytical model to describe the effect of static dipolar disorder in a polymer dielectric on the density of states of an adjacent organic semiconductor. The degree of energetic disorder varies strongly with distance from the interface. Using a simple mobility model, we have been able to explain quantitatively both the magnitude as well as the gate voltage dependence of the field-effect mobility for polymer gate dielectrics with different dielectric constants.
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