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SHG in doped GaSe:In crystals
Zhi-Shu Feng1, Zhi-Hui Kang, Feng-Guang Wu
1Key Laboratory of Coherent Light and Atomic and Molecular Spectroscopy of Ministry of Education and College of Physics, Jilin University, 2519 Jie-Fang Road, Changchun, 130023, China.
Optics Express
|June 26, 2008
Summary
Indium-doped Gallium Selenide (GaSe:In) crystals show stable phase matching for nonlinear optical applications. These crystals maintain optical properties across a wide temperature range, making them suitable for high-power lasers.
Area of Science:
- Nonlinear Optics
- Solid-State Physics
- Materials Science
Background:
- Gallium Selenide (GaSe) is a promising nonlinear optical material.
- Investigating dopant effects on GaSe properties is crucial for optimizing its applications.
Purpose of the Study:
- To study the optical transmission and phase matching (PM) conditions for second harmonic generation (SHG) in indium-doped GaSe (GaSe:In).
- To compare these properties with pure and sulfur-doped GaSe (GaSe:S).
- To evaluate the temperature dependence of PM properties.
Main Methods:
- Experimental investigation of optical transmission spectra.
- Measurement of phase matching angles for SHG using Er3+:YSGG and CO2 lasers.
- Temperature-dependent measurements of PM properties from -165 to 230 °C.
Main Results:
- GaSe:In crystals (up to 2.32% In) showed no change in transparency.
- Minor shifts in PM angles were observed for SHG of Er3+:YSGG and CO2 lasers.
- Low temperature coefficients (dθ/dT) were found for GaSe:In, indicating thermal stability.
- Linear variation of PM angle with temperature confirmed no crystal structure transformation.
Conclusions:
- Indium doping in GaSe does not degrade optical transparency.
- GaSe:In exhibits excellent thermal stability for phase matching.
- GaSe:In solid solutions are prospective for high average power nonlinear optical systems.
