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Updated: Jul 4, 2026

10:31
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy
Philippe Caroff1, Jakob B Wagner, Kimberly A Dick
1Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118 SE-22100 Lund, Sweden. philippe.caroff@ftf.lth.se
Small (Weinheim an Der Bergstrasse, Germany)
|June 26, 2008
Abstract
No abstract available in PubMed .

