Related Experiment Video
Updated: Jul 3, 2026
08:07
Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
Published on: June 18, 2013
p-Type ZnO nanowire arrays.
1Centre Of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, People's Republic of China.
Nano Letters
|July 16, 2008
Summary
Researchers synthesized durable p-type zinc oxide nanowires (ZnO NWs) using nitrogen doping. These stable, reproducible nanowires are crucial for developing advanced nanoscale electronic and optoelectronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Zinc oxide (ZnO) is a promising semiconductor material for electronics.
- Achieving stable p-type conductivity in ZnO has been a significant challenge.
- Well-aligned nanowire (NW) arrays offer unique properties for device applications.
Purpose of the Study:
- To synthesize well-aligned ZnO nanowire arrays with durable and reproducible p-type conductivity.
- To investigate the effect of nitrogen doping on the crystal structure and electrical properties of ZnO NWs.
- To explore the potential of these p-type ZnO NWs for nanoscale electronic and optoelectronic devices.
Main Methods:
- Vapor-liquid-solid (VLS) growth method was employed for ZnO NW synthesis.
- Nitrogen dioxide (N2O) was used as the dopant source.
- Electrical transport measurements and temperature-dependent photoluminescence (PL) spectroscopy were utilized for characterization.
Main Results:
- Single-crystalline ZnO NWs were grown along the [110] direction with nitrogen doping, contrasting with the [001] direction of undoped NWs.
- Nitrogen-doped ZnO NWs exhibited stable and reproducible p-type conductivity with a hole concentration of (1-2) x 10^18 cm^-3 and mobility of 10-17 cm^2 V^-1 s^-1.
- Acceptor-bound-exciton emission observed in PL spectra confirmed the p-type conductivity.
Conclusions:
- Durable and reproducible p-type ZnO NWs were successfully synthesized using N2O doping.
- The controlled electrical properties of these p-type ZnO NWs are vital for fabricating nanoscale electronic and optoelectronic devices.
- Further research into surface adsorption effects on transport properties is warranted.
