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Updated: Jul 3, 2026

Aerosol-assisted Chemical Vapor Deposition of Metal Oxide Structures: Zinc Oxide Rods
Published on: September 14, 2017
Initial oxidation and interfacial diffusion of Zn on faceted MgO(111) films
Mingshan Xue1, Qinlin Guo, Kehui Wu
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing, China.
Abstract:
The interaction of zinc and faceted MgO(111) thin films prepared on a Mo(110) substrate was investigated in situ by using various surface analysis techniques, including X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, Auger electron spectroscopy, high-resolution electron energy loss spectroscopy, and low-energy electron diffraction. The results revealed that three-dimensional Zn islands exist on the faceted MgO(111) films and that no chemical interaction takes place at the interface at room temperature. Initially, deposited Zn is stable at temperatures below 400 K and diffuses into MgO at temperatures above 425 K. A portion of Zn is oxidized at approximately 10 (-6) mbar O 2 at room temperature. An interfacial phase of Zn x Mg 1- x O was formed after Zn was exposed to approximately 10 (-6) mbar O 2 at temperatures >or=500 K. The faceted structure on the MgO(111) surface is of a disadvantage for the epitaxial growth of ZnO films.
