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Updated: Jul 3, 2026
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Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
Published on: May 29, 2018
Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted deposition
Alessandro Molle1, Sabina Spiga, Marco Fanciulli
1CNR-INFM Laboratorio Nazionale MDM, Via C. Olivetti 2, 20041 Agrate Brianza (Milano), Italy. alessandro.molle@mdm.infm.it
The Journal of Chemical Physics
|July 16, 2008
Abstract:
The composition of GeO(2) films grown on Ge has been studied for different molecular deposition processes and after exposure to ambient air. The stoichiometry, the interaction with moisture, and the interfacial details of the films are shown to be dramatically process dependent.
