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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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Related Experiment Video

Updated: Jul 3, 2026

Effective Analysis of Human Exposure Conditions with Body-worn Dosimeters in the 2.4 GHz Band

Effective Analysis of Human Exposure Conditions with Body-worn Dosimeters in the 2.4 GHz Band

Published on: May 2, 2018

Monte Carlo simulation of MOSFET dosimeter for electron backscatter using the GEANT4 code.

James C L Chow¹, Michael K K Leung

¹Department of Radiation Physics, Princess Margaret Hospital Toronto, Ontario, Canada. james.chow@rmp.uhn.on.ca

Medical Physics

|July 25, 2008

Summary

This summary is machine-generated.

The metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeter accurately measures electron backscatter from lead, with minor underestimations within simulation uncertainties. This indicates reliable performance for electron beam dosimetry applications.

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Last Updated: Jul 3, 2026

Effective Analysis of Human Exposure Conditions with Body-worn Dosimeters in the 2.4 GHz Band

Effective Analysis of Human Exposure Conditions with Body-worn Dosimeters in the 2.4 GHz Band

Published on: May 2, 2018

A Machine-Vision Approach to Transmission Electron Microscopy Workflows, Results Analysis and Data Management

A Machine-Vision Approach to Transmission Electron Microscopy Workflows, Results Analysis and Data Management

Published on: June 23, 2023

Area of Science:

Medical Physics
Radiation Dosimetry
Materials Science

Background:

Electron backscatter is crucial in radiation therapy, influencing dose distribution.
Metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters offer precise real-time dose measurements.
Accurate characterization of dosimeter response in the presence of high-Z materials like lead is essential.

Purpose of the Study:

To investigate the influence of the MOSFET dosimeter body on measuring electron backscatter from lead.
To quantify the electron backscatter factor (EBF) under varying electron beam energies.
To compare Monte Carlo simulation results with experimental measurements.

Main Methods:

Monte Carlo simulations using the GEANT4 code for electron beams (4-12 MeV).
Calculation of electron backscatter factor (EBF).
Experimental measurements to validate simulation data.

Main Results:

MOSFET body presence caused EBF underestimation (0.9%-2%), within Monte Carlo statistical uncertainties (0.8%-1.3%).
Electron energy spectra of backscattered electrons were determined, showing energy-dependent deviations.
Softer backscattered electron spectra with lead present can reduce MOSFET response.

Conclusions:

MOSFET dosimeters perform well for measuring electron backscatter from lead with electron beams.
The observed EBF deviations are insignificant when considering Monte Carlo uncertainties.
Measurement uncertainties align with simulation results and are within MOSFET dosimeter accuracy.