Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Gap Junctions01:37

Gap Junctions

Multicellular organisms employ a variety of ways for cells to communicate with each other. Gap junctions are specialized proteins that form pores between neighboring cells in animals, connecting the cytoplasm between the two, and allowing for the exchange of molecules and ions. They are found in a wide range of invertebrate and vertebrate species, mediate numerous functions including cell differentiation and development, and are associated with numerous human diseases, including cardiac and...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Junction Potentials in Galvanic Cells01:21

Junction Potentials in Galvanic Cells

The Nernst equation, derived under the assumption of thermodynamic equilibrium, calculates the electromotive force (emf) as the sum of potential differences at phase boundaries in a reversible cell without a liquid junction. However, in irreversible cells such as the Daniell cell, an additional potential difference named the liquid-junction potential (EJ) arises across the interface of two electrolyte solutions due to different ion diffusion rates. This EJ represents the potential difference...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Single-Crystal Silicon Nanotubes, Hollow Nanocones, and Branched Nanotube Networks.

ACS nano·2024
Same author

Biochemically functionalized probes for cell-type-specific targeting and recording in the brain.

Science advances·2023
Same author

Biochemically-functionalized probes for cell type-specific targeting and recording in the brain.

bioRxiv : the preprint server for biology·2023
Same author

Laminin-coated electronic scaffolds with vascular topography for tracking and promoting the migration of brain cells after injury.

Nature biomedical engineering·2023
Same author

Ultraflexible endovascular probes for brain recording through micrometer-scale vasculature.

Science (New York, N.Y.)·2023
Same author

Injectable Ventral Spinal Stimulator Evokes Programmable and Biomimetic Hindlimb Motion.

Nano letters·2023
Same journal

Publisher Correction: Chemical efflux imaging using an annular nanosensor array for in situ bladder cancer detection.

Nature nanotechnology·2026
Same journal

Charged grain boundaries limit short-circuit endurance in garnet solid-state battery electrolytes.

Nature nanotechnology·2026
Same journal

A non-viral path to efficient and safe prime editing in vivo.

Nature nanotechnology·2026
Same journal

Spectral visualization of excitonic pair breaking at individual impurities in Ta<sub>2</sub>Pd<sub>3</sub>Te<sub>5</sub>.

Nature nanotechnology·2026
Same journal

Clocked stepping of an artificial protein walker along a DNA track.

Nature nanotechnology·2026
Same journal

Stepping ahead toward custom-designed autonomous motor proteins.

Nature nanotechnology·2026
See all related articles

Related Experiment Video

Updated: Jul 3, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Ge/Si nanowire mesoscopic Josephson junctions.

Jie Xiang1, A Vidan, M Tinkham

  • 1Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.

Nature Nanotechnology
|July 26, 2008
PubMed
Summary
This summary is machine-generated.

Researchers explored quantum confinement in germanium/silicon core/shell nanowires (NWs) to study superconductivity. They tuned critical supercurrent using gate voltage, observing stepwise increases due to quantum effects and coherent charge transport.

More Related Videos

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling
08:58

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling

Published on: January 28, 2021

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Related Experiment Videos

Last Updated: Jul 3, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling
08:58

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling

Published on: January 28, 2021

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Quantum confinement in nanostructures is crucial for fundamental physics.
  • Superconducting properties in semiconductor-nanowire heterostructures are of significant interest.

Purpose of the Study:

  • Investigate proximity-induced superconductivity in undoped Ge/Si core/shell nanowires (NWs).
  • Explore the tunability of critical supercurrent via gate-controlled carrier density.
  • Analyze quantum confinement effects on superconductivity in NWs.

Main Methods:

  • Fabrication of Ge/Si core/shell NW heterostructures.
  • Contacting NWs with superconducting leads.
  • Utilizing a top gate electrode to modulate carrier density.
  • Performing low-temperature transport measurements.

Main Results:

  • Tunable critical supercurrent from zero to over 100 nA.
  • Stepwise increases in critical current attributed to discrete sub-bands from radial confinement.
  • Observation of high-order (n=25) resonant multiple Andreev reflections.
  • Evidence of smooth NW channels and highly coherent charge transport.

Conclusions:

  • Demonstrated control over superconducting states in semiconductor-superconductor hybrid nanostructures.
  • Highlighted the role of quantum confinement in modulating superconductivity.
  • Opened new avenues for studying low-dimensional superconductivity and coherent quantum phenomena.