Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Electrochemical Systems01:24

Electrochemical Systems

Electrochemical systems provide a fascinating insight into the dynamic interplay of charged species within various phases. One notable example is the interaction between a membrane permeable to K⁺ ions but not to Cl⁻ ions, separating an aqueous KCl solution from pure water. As K⁺ ions diffuse through the membrane, they generate net charges on each phase, leading to a potential difference between them.Similarly, when a piece of Zn is immersed in an aqueous ZnSO₄ solution, the Zn metal, composed...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Chip-Scale Aligned Chiral Carbon Nanotubes Exhibiting Giant Second Harmonic Generation.

ACS nano·2026
Same author

Two-Dimensional MoSe<sub>2</sub> Schottky-Barrier Transistors for Application in On-Chip Thermal Sensing.

ACS applied materials & interfaces·2026
Same author

Intrinsic Ultrafast Edge Photocurrent Dynamics in WTe<sub>2</sub> Driven by Broken Crystal Symmetry.

Nano letters·2025
Same author

Robust Exciton Binding Energy in Aggregated Structure-Sorted Carbon Nanotubes Revealed by Two-Photon Excitation Spectroscopy.

ACS nano·2025
Same author

Generalized Energy Band Alignment Model for van der Waals Heterostructures with a Charge Spillage Dipole.

ACS nano·2025
Same author

Ultrahigh-Purity Single-Photon Emission from 2D WSe<sub>2</sub> via Effective Suppression of Classical Emission.

Nano letters·2025
Same journal

Publisher Correction: Chemical efflux imaging using an annular nanosensor array for in situ bladder cancer detection.

Nature nanotechnology·2026
Same journal

Charged grain boundaries limit short-circuit endurance in garnet solid-state battery electrolytes.

Nature nanotechnology·2026
Same journal

A non-viral path to efficient and safe prime editing in vivo.

Nature nanotechnology·2026
Same journal

Spectral visualization of excitonic pair breaking at individual impurities in Ta<sub>2</sub>Pd<sub>3</sub>Te<sub>5</sub>.

Nature nanotechnology·2026
Same journal

Clocked stepping of an artificial protein walker along a DNA track.

Nature nanotechnology·2026
Same journal

Stepping ahead toward custom-designed autonomous motor proteins.

Nature nanotechnology·2026
See all related articles

Related Experiment Video

Updated: Jul 3, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Carbon-based electronics.

Phaedon Avouris1, Zhihong Chen, Vasili Perebeinos

  • 1IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA. avouris@us.ibm.com

Nature Nanotechnology
|July 26, 2008
PubMed
Summary
This summary is machine-generated.

Researchers are exploring carbon nanotubes and graphene nanoribbons as alternatives to traditional silicon devices. These novel materials show promise for advanced electronics and optoelectronics, overcoming current industry limitations.

More Related Videos

Fabrication of 3D Carbon Microelectromechanical Systems (C-MEMS)
08:01

Fabrication of 3D Carbon Microelectromechanical Systems (C-MEMS)

Published on: June 17, 2017

Ultrasensitive Detection of Biomarkers by Using a Molecular Imprinting Based Capacitive Biosensor
08:22

Ultrasensitive Detection of Biomarkers by Using a Molecular Imprinting Based Capacitive Biosensor

Published on: February 16, 2018

Related Experiment Videos

Last Updated: Jul 3, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Fabrication of 3D Carbon Microelectromechanical Systems (C-MEMS)
08:01

Fabrication of 3D Carbon Microelectromechanical Systems (C-MEMS)

Published on: June 17, 2017

Ultrasensitive Detection of Biomarkers by Using a Molecular Imprinting Based Capacitive Biosensor
08:22

Ultrasensitive Detection of Biomarkers by Using a Molecular Imprinting Based Capacitive Biosensor

Published on: February 16, 2018

Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • The semiconductor industry has relied on miniaturization for performance gains for over 40 years.
  • Current miniaturization approaches face imminent scientific and technical limitations.
  • Alternative device technologies are crucial for future electronic system advancements.

Purpose of the Study:

  • To review progress in alternative device technologies using carbon nanotubes and graphene.
  • To highlight the potential of these nanomaterials in overcoming semiconductor industry limits.

Main Methods:

  • Review of existing research on carbon nanotubes (CNTs) and graphene nanoribbons.
  • Analysis of demonstrated field-effect transistors (FETs) based on these nanomaterials.
  • Evaluation of the properties of metallic CNTs for interconnect applications.

Main Results:

  • Field-effect transistors using semiconductor nanotubes and graphene nanoribbons have been successfully demonstrated.
  • Metallic nanotubes show potential as high-performance interconnects.
  • The optical properties of nanotubes suggest possibilities for integrated electronic and optoelectronic devices.

Conclusions:

  • Carbon nanotubes and graphene nanoribbons represent promising alternatives to conventional semiconductor devices.
  • These materials offer pathways to continued performance improvements in electronics and optoelectronics.
  • Future research could lead to novel devices leveraging the unique electronic and optical properties of these nanomaterials.