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20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
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Continuous-wave two-photon absorption in a Watt-class semiconductor optical amplifier.

Paul W Juodawlkis1, Jason J Plant, Joseph P Donnelly

  • 1Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420, USA. juodawlkis@ll.mit.edu

Optics Express
|August 6, 2008
PubMed
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Continuous-wave two-photon absorption (TPA) generates free carriers in InGaAsP/InP quantum-well amplifiers. This TPA and subsequent free-carrier absorption (FCA) limit the output intensity of high-power semiconductor devices.

Area of Science:

  • Optoelectronics
  • Semiconductor physics
  • Photonics

Background:

  • Semiconductor optical amplifiers are crucial for optical communication systems.
  • Understanding carrier dynamics is essential for optimizing device performance.
  • Low-confinement waveguides present unique challenges for high-power operation.

Purpose of the Study:

  • To investigate photoluminescence from free carriers generated by continuous-wave (CW) two-photon absorption (TPA) in InGaAsP/InP quantum-well slab-coupled optical waveguide amplifiers (SCOWAs).
  • To determine the impact of TPA and TPA-generated free-carrier absorption (FCA) on the output intensity limitations of high-power semiconductor optical amplifiers and lasers.

Main Methods:

  • Observation of photoluminescence generated via CW TPA in a packaged, low-confinement InGaAsP/InP SCOWA.

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Last Updated: Jul 3, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
10:17

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Published on: July 12, 2017

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  • Measurement of photoluminescence power dependence on the amplifier's output power.
  • Comparison of experimental gain saturation data with simulations.

    • Main Results:

    • Photoluminescence power showed a quadratic dependence on the amplifier's output power at the bandgap wavelength.
    • The study identified TPA and FCA as limiting factors for CW output intensity in high-power, low-confinement semiconductor devices.
    • Saturation output power was measured at 0.8 W with specific mode-field diameters.

    Conclusions:

    • CW TPA is a significant mechanism for free carrier generation in these devices.
    • The combined effects of TPA and FCA fundamentally limit the achievable CW output intensity.
    • These findings are critical for the design and performance optimization of high-power semiconductor lasers and optical amplifiers.