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Updated: Jul 2, 2026

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Published on: April 18, 2019
Noninvasive beam-wave spectrometric instrumentation for measuring dielectric constant at microwave frequencies
P S Neelakantaswamy1, R Govindarajan
1Department of Electrical Engineering, Indian Institute of Technology, Madras 600036, India.
Abstract:
From the characteristics of the reflected Gaussian beam-wave for oblique incidence, measured with a spectrometer arrangement, the dielectric properties of a selectively exposed region of a dielectric slab are ascertained at microwave frequencies. For this purpose, a focused (Gaussian) microwave beam is launched from a suitable applicator to irradiate obliquely a selected protion of the test dielectric and the complex reflection coefficient is measured and analyzed. Further, the magnitude of the angular shift involved in the direction of the reflected beam is also used to calculate the dielectric constant. Application of this method to noninvasive measurements of dielectric properties of selective partial-bodies of commercial dielectrics and biological substances is discussed.
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