Highly reliable temperature sensor using rf-sputtered SiC thin film

Area of Science:

• Materials Science
• Electrical Engineering
• Sensor Technology

Background:

• Traditional thermistors face limitations in high-temperature stability and accuracy.
• Silicon carbide (SiC) possesses inherent properties suitable for high-temperature electronic components.

Purpose of the Study:

• To develop a robust SiC thin-film thermistor for high-temperature applications.
• To evaluate the electrical stability and accuracy of the developed SiC thermistor.

Main Methods:

• Utilized radio frequency (rf) sputtering to deposit SiC thin films.
• Fabricated thin-film thermistors using the developed SiC films.
• Conducted long-term thermal stress testing at elevated temperatures (400°C for 2000 hours).
• Characterized thermistor resistance and thermistor coefficient.

Main Results:

• The SiC thin-film thermistor operates effectively between -100°C and 450°C.
• Demonstrated exceptional electrical stability with less than 3% resistance change after 2000 hours at 400°C.
• Achieved high accuracy with a thermistor coefficient within +/-0.5% and thermistor resistance within +/-1.5%.

Conclusions:

• RF-sputtered SiC thin films enable the development of high-performance, high-temperature thermistors.
• The developed SiC thermistor offers superior stability and accuracy compared to conventional devices.
• This technology is suitable for demanding industrial and consumer electronic applications requiring precise temperature sensing.