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Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers
Fang Qian1, Yat Li, Silvija Gradecak
1Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.
Nature Materials
|August 20, 2008
Summary
Researchers developed novel III-nitride multi-quantum-well (MQW) core/shell nanowires. These structures enable room-temperature lasing across a wide spectrum, paving the way for advanced nanolasers.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Complex nanowire structures offer enhanced electronic and photonic properties.
- Previous studies demonstrated improved performance in Ge/Si core/shell and Si nanowires for various applications.
Purpose of the Study:
- To report the first multi-quantum-well (MQW) core/shell nanowire heterostructures using III-nitride materials.
- To achieve room-temperature lasing over a broad wavelength range.
Main Methods:
- Synthesis of triangular GaN nanowire cores.
- Epitaxial growth of uniform (InGaN/GaN)n quantum wells (n=3, 13, 26) with 1-3 nm InGaN well thicknesses.
- Optical excitation and characterization of individual MQW nanowire structures.
Main Results:
- Demonstrated dislocation-free growth of highly uniform InGaN/GaN MQW structures on GaN nanowire cores.
- Achieved room-temperature lasing with emission tunable from 365 to 494 nm, dependent on InGaN composition.
- Observed lasing threshold dependence on the number of quantum wells (n).
Conclusions:
- This work presents a new level of complexity in nanowire heterostructures.
- The developed III-nitride MQW nanowires show potential for creating free-standing injection nanolasers.
