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Related Concept Videos

Network Covalent Solids02:18

Network Covalent Solids

Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
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Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...

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Related Experiment Video

Updated: Jul 2, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Graphene-based atomic-scale switches.

Brian Standley1, Wenzhong Bao, Hang Zhang

  • 1Department of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA.

Nano Letters
|August 30, 2008
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel nonvolatile memory element using graphene break junctions. This graphene memory shows thousands of write cycles and long data retention, utilizing atomic chain formation for storage.

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Last Updated: Jul 2, 2026

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Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding

Published on: September 23, 2018

Area of Science:

  • Materials Science
  • Nanotechnology
  • Computer Engineering

Background:

  • Graphene possesses exceptional mechanical and electrical properties.
  • Graphene is compatible with silicon-based electronics.
  • Novel computing devices require advanced memory materials.

Purpose of the Study:

  • To develop a nonvolatile memory element using graphene.
  • To investigate the operational mechanism of graphene memory devices.
  • To demonstrate information storage using graphene switches.

Main Methods:

  • Fabrication of graphene break junction devices.
  • Testing of device endurance (writing cycles) and data retention.
  • Modeling of device operation based on atomic chain formation.
  • Implementation of rank coding for information storage.

Main Results:

  • Demonstrated a functional nonvolatile memory element based on graphene break junctions.
  • Achieved thousands of writing cycles.
  • Exhibited long data retention times.
  • Proposed and validated a model involving carbon atomic chain formation and breaking.

Conclusions:

  • Graphene break junctions are a viable technology for nonvolatile memory.
  • The proposed atomic chain mechanism explains device operation.
  • Rank coding offers an effective method for data storage in these graphene devices.