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Updated: Jul 3, 2026
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Monolithic Axial InGaAs Quantum Dot Emitters in GaAs-Based Nanowires via Sb-Mediated Facet Engineering
Hyowon W Jeong1,2, Aris Koulas-Simos3, Imad Limame3
1Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany.
Nano Letters
|July 2, 2026
Summary
We developed InGaAs quantum emitters in GaAs nanowires for scalable quantum photonics. Dilute antimony incorporation suppresses defects, enabling efficient single-photon sources integrated on silicon.
Area of Science:
- Semiconductor Nanowires
- Quantum Photonics
- Materials Science
Background:
- Gallium arsenide (GaAs)-based nanowires with quantum heterostructures are crucial for integrating single-photon sources onto silicon.
- Challenges include controlling ultrathin axial quantum-emitter formation due to facet dynamics and rotational twins, impacting interface abruptness.
Purpose of the Study:
- To develop InGaAs-based quantum emitters in GaAs nanowires for monolithic integration.
- To overcome limitations in ultrathin axial quantum-emitter formation using defect control.
Main Methods:
- Tailoring facet evolution in GaAs nanowires through dilute antimony (Sb) incorporation.
- Utilizing single-nanowire optical spectroscopy and second-order photon-correlation measurements.
Main Results:
- Dilute Sb incorporation efficiently suppressed twins and promoted axial insertion at the growth front.
- Abrupt, few-nanometer-thin quantum dots were successfully formed at the nanowire tips.
- Intense, localized emission with short lifetimes (0.51 ± 0.02 ns) and confirmed single-photon emission (g(2)(0) < 0.4) were observed.
Conclusions:
- Defect control, specifically twin density, is critical for axial heterostructure formation in nanowires.
- This approach is key for realizing monolithically integrated nanowire single-photon sources for quantum photonics.
