Near-field visualization of dynamical processes of semiconductor surface

Area of Science:

• Solid State Physics
• Materials Science
• Computational Physics

Background:

• Semiconductor surfaces exhibit complex electron distributions.
• Understanding these distributions is crucial for device performance.
• Time-resolved near-field microscopy offers insights into dynamic surface phenomena.

Purpose of the Study:

• To develop a novel calculation method for near-field images of semiconductor surfaces.
• To analyze inhomogeneous electron distributions induced by focused laser pulses.
• To enable the extraction of key semiconductor parameters from experimental data.

Main Methods:

• Green function method for near-field image calculation.
• Maximizing analytical computations for efficiency.
• Simulation of GaAs surfaces at various time points.

Main Results:

• Successfully calculated near-field images for GaAs surfaces.
• Demonstrated the method's ability to capture dynamic electron behavior.
• Obtained surface images at different time instances post-laser excitation.

Conclusions:

• The developed Green function approach provides a universal method for near-field image calculation.
• This method facilitates the determination of semiconductor surface parameters like diffusion constant and relaxation time.
• The approach is valuable for interpreting time-resolved near-field microscopy experiments.