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Charge transport in chemically doped 2D graphene
Aurélien Lherbier1, X Blase, Yann-Michel Niquet
1Laboratoire des Technologies de la Microélectronique (LTM), UMR 5129 CNRS, 17 Rue des Martyrs 38054 Grenoble, France.
Physical Review Letters
|September 4, 2008
Summary
Chemically doping 2D graphene materials with boron and nitrogen preserves remarkable electronic transport properties, even at high impurity concentrations. This chemical doping results in asymmetric electron-hole mobilities and conductivities near the Dirac point.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Computational Chemistry
Background:
- Two-dimensional (2D) graphene materials exhibit unique electronic properties.
- Chemical doping is a key method for tuning graphene's conductivity.
- Understanding the impact of dopants on charge transport is crucial for device applications.
Purpose of the Study:
- To numerically investigate the electronic transport in chemically doped 2D graphene.
- To analyze the effects of boron and nitrogen substitutions on charge mobilities and conductivities.
- To evaluate the influence of impurity concentration on quantum interference effects.
Main Methods:
- Ab initio calculations to derive a self-consistent scattering potential for dopants.
- Quantum-mechanical Kubo-Greenwood approach for evaluating transport properties.
- Simulation of systems with impurity concentrations from 0.5% to 4.0%.
Main Results:
- Chemically doped graphene retains remarkable transport properties even at 4.0% doping concentration.
- Quantum interference effects have a marginal impact on conduction at these doping levels.
- Electron-hole mobilities and conductivities exhibit asymmetry around the Dirac point due to doping.
Conclusions:
- Chemical doping of 2D graphene with boron and nitrogen is a viable strategy to tune electronic properties.
- Graphene's robust transport characteristics are maintained across a significant range of doping concentrations.
- The observed asymmetry in transport properties offers potential for novel electronic device functionalities.
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