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Updated: Jan 10, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Robust and localised control of a 10-spin qubit array in germanium
Valentin John1, Cécile X Yu2, Barnaby van Straaten2
1QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands. V.John@tudelft.nl.
Abstract:
Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for electric, fast and high-fidelity qubit gates. However, the strong g-tensor anisotropy of holes in germanium and their sensitivity to the operational and environmental conditions challenge the operation of large qubit arrays. Here, we investigate a two-dimensional 10-spin qubit array with single-qubit gate fidelities above 99%, and obtain surprisingly uniform qubit properties. By tuning the hole occupation, we demonstrate control over the spin susceptibility, enabling fast plunger gate driving with Rabi frequencies consistently above 1.45 MHz/ (mV ⋅ T). Moreover, we probe the locality of electric dipole spin resonance and find that the configuration with three-hole occupancy driven by the associated quantum dot plunger gate reduces crosstalk, lowering it by an average factor of 2.5 to nearest neighbours, compared to single-hole plunger driving. Theoretical modelling points towards the pronounced anisotropy of p-like orbitals as the main mechanism with significant contributions through Coulomb interactions, giving directions for reproducible control of large qubit arrays.
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