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Related Concept Videos

Determination of Crystal Structures01:29

Determination of Crystal Structures

In the late 1800s, the revelation that light extended beyond visible wavelengths led to the discovery of X-rays by Wilhelm Roentgen. Recognized as high-energy electromagnetic radiation with short wavelengths, X-rays prompted exploration into their interaction with crystals. Max von Laue proposed in 1912 that the periodic arrangement of atoms, ions, or molecules in crystals would cause them to diffract X-rays, a hypothesis confirmed through experiments with copper sulfate and zinc sulfide...
X-ray Crystallography02:18

X-ray Crystallography

The size of the unit cell and the arrangement of atoms in a crystal may be determined from measurements of the diffraction of X-rays by the crystal, termed X-ray crystallography.
Diffraction
Diffraction is the change in the direction of travel experienced by an electromagnetic wave when it encounters a physical barrier whose dimensions are comparable to those of the wavelength of the light. X-rays are electromagnetic radiation with wavelengths about as long as the distance between neighboring...
Bending01:10

Bending

Pure bending is a fundamental concept in structural mechanics, essential for understanding how materials deform under symmetrical loads without direct forces. Pure bending occurs when prismatic members, such as beams, are subjected to equal and opposite moments that induce bending. The phenomenon is crucial as it allows for predicting stress distributions without the influence of axial or shear forces.
In pure bending, the bending stress in a beam is calculated based on the bending moment and...
Unit Cells01:18

Unit Cells

A crystal's internal structure is an orderly array of atoms, ions, or molecules, and the details of this array significantly influence the solid's properties. In a crystal, periodically repeating 'structural motifs' - which could be atoms, molecules, or groups thereof - create a 'space lattice.' This is essentially a three-dimensional, infinite array of points, each surrounded by its neighbors in an identical way, forming the basic structure of the crystal.A 'unit cell' is a theoretical...
Crystal Field Theory - Tetrahedral and Square Planar Complexes02:46

Crystal Field Theory - Tetrahedral and Square Planar Complexes

Tetrahedral Complexes
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...
Crystal Density01:19

Crystal Density

The crystal lattice structure of a material allows us to determine how many molecules exist in its unit cell. With this information, alongside the unit-cell parameters - three distance parameters (a, b, c) and three angular parameters (α, β, γ).Density (ρ) = (Z × M) / (a × b × c × NA)where:Z is the number of formula units per unit cellM is the molar mass of the substancea, b, and c are the edge lengths of the unit cellNA is Avogadro’s numberFor a simple cubic lattice, atoms are located only at...

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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

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Published on: November 7, 2016

Quantitative and easy estimation of a crystal bending effect using low-order CBED patterns.

Takashi Yamazaki1, Akihiro Kashiwagi, Koji Kuramochi

  • 1Department of Physics, Tokyo University of Science, Tokyo, Japan. yamazaki@rs.kagu.tus.ac.jp

Journal of Electron Microscopy
|October 14, 2008
PubMed
Summary

This study quantifies crystal bending near interfaces using convergent beam electron diffraction (CBED). The method reveals thin-foil relaxation in SiGe/Si, measuring a 0.3-degree bend approximately 10 nm from the interface.

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Crystallography

Background:

  • Crystal bending is a critical factor influencing the properties of semiconductor heterostructures.
  • Accurate measurement of localized crystal bending near interfaces is essential for understanding strain relaxation and device performance.
  • Existing methods for measuring crystal bending may lack the spatial resolution required for nanoscale analysis.

Purpose of the Study:

  • To develop and apply a quantitative method for measuring crystal bending effects near interfaces.
  • To assess the feasibility of using low-order zone-axis convergent beam electron diffraction (CBED) patterns for crystal bending analysis.
  • To investigate the crystal bending effect at the SiGe/Si interface and its relation to thin-foil relaxation.

Main Methods:

  • Utilizing low-order zone-axis convergent beam electron diffraction (CBED) patterns for quantitative analysis.
  • Employing CBED to estimate the magnitude and type (tensile or compressive) of crystal bending.
  • Applying the developed method to analyze the crystal bending in the vicinity of the SiGe/Si interface.

Main Results:

  • The study successfully quantified crystal bending using CBED patterns.
  • The method allows for the estimation of crystal bending effects in regions close to interfaces.
  • A crystal bending effect of approximately 0.3 degrees due to thin-foil relaxation was measured at about 10 nm from the SiGe/Si interface.

Conclusions:

  • Low-order zone-axis CBED provides a viable method for quantifying crystal bending near interfaces.
  • This technique enables the identification of tensile or compressive bending, offering insights into strain relaxation mechanisms.
  • The findings demonstrate significant thin-foil relaxation in SiGe/Si heterostructures, impacting device performance.