Related Experiment Video
Updated: Jun 29, 2026

05:39
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Anomalous Josephson current in junctions with spin polarizing quantum point contacts.
A A Reynoso1, Gonzalo Usaj, C A Balseiro
1Instituto Balseiro, Centro Atómico Bariloche, Río Negro, Argentina.
Physical Review Letters
|October 15, 2008
Summary
We found an anomalous supercurrent in Josephson junctions due to spin-orbit coupling and magnetic fields. This effect leads to current rectification, enabling new possibilities for superconducting electronics.
Area of Science:
- Condensed matter physics
- Quantum electronics
Background:
- Ballistic Josephson junctions are crucial for quantum electronics.
- Rashba spin-orbit coupling in two-dimensional electron gases influences spin properties.
- Quantum point contacts can act as spin filters in electronic circuits.
Purpose of the Study:
- To investigate the behavior of a ballistic Josephson junction with a quantum point contact in a two-dimensional electron gas featuring Rashba spin-orbit coupling.
- To explore the effects of an in-plane external magnetic field on the supercurrent properties of such a system.
Main Methods:
- Theoretical modeling of a Josephson junction incorporating a quantum point contact with Rashba spin-orbit coupling.
- Analysis of supercurrent behavior under an applied in-plane magnetic field.
Main Results:
- An anomalous supercurrent was observed even at zero phase difference between superconducting electrodes.
- The external magnetic field induced significant critical current asymmetries for different current flow directions.
- Supercurrent rectification effects were demonstrated.
Conclusions:
- The interplay of Rashba spin-orbit coupling and magnetic fields in Josephson junctions can lead to novel phenomena like anomalous supercurrents.
- The observed critical current asymmetries and rectification effects offer potential for spintronic and quantum computing applications.
Related Concept Videos
Biasing of P-N Junction
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
P-N junction
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Spin–Spin Coupling Constant: Overview
In bromoethane, the three methyl protons are coupled to the two methylene protons that are three bonds away. In accordance with the n+1 rule, the signal from the methyl protons is split into three peaks with 1:2:1 relative intensities. The methylene protons appear as a quartet, with the relative intensities of 1:3:3:1.
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must have a...
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must have a...
Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Magnetic Field due to Moving Charges
A stationary charge creates and interacts with the electric field, while a moving charge creates a magnetic field.
Consider a point charge moving with a constant velocity. Like the electric field, the magnetic field at any point is directly proportional to the magnitude of the charge and inversely proportional to the square of the distance between the source point and the field point. However, unlike the electric field, the magnetic field is always perpendicular to the plane containing the line...
Consider a point charge moving with a constant velocity. Like the electric field, the magnetic field at any point is directly proportional to the magnitude of the charge and inversely proportional to the square of the distance between the source point and the field point. However, unlike the electric field, the magnetic field is always perpendicular to the plane containing the line...
Junction Potentials in Galvanic Cells
The Nernst equation, derived under the assumption of thermodynamic equilibrium, calculates the electromotive force (emf) as the sum of potential differences at phase boundaries in a reversible cell without a liquid junction. However, in irreversible cells such as the Daniell cell, an additional potential difference named the liquid-junction potential (EJ) arises across the interface of two electrolyte solutions due to different ion diffusion rates. This EJ represents the potential difference...

