Related Experiment Video
Updated: Jun 29, 2026

11:08
Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
Published on: November 30, 2012
High-speed low-power photonic transistor devices based on optically-controlled gain or absorption to affect optical
1Dept of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA.
Optics Express
|October 15, 2008
Summary
Researchers developed a novel photonic transistor using optical interference for efficient signal gain and switching. These micro-sized devices offer high speed and low power, outperforming current technologies.
Area of Science:
- Photonics
- Optoelectronics
- Nanotechnology
Background:
- Current optical switching technologies face limitations in speed and energy efficiency.
- Nonlinear optical effects (chi((3))) are typically used for optical signal processing, but offer limited performance.
Purpose of the Study:
- To demonstrate a novel photonic transistor device.
- To achieve efficient transistor signal gain and switching action using optical interference.
- To explore applications in optical signal processing and computing.
Main Methods:
- Manipulation of optical interference through optically controlled gain or absorption.
- Design and fabrication of two complementary photonic transistor device types.
- Characterization of device performance, including operating speed, size, and power consumption.
Main Results:
- Successful realization of photonic transistor devices with efficient signal gain and switching.
- Devices exhibit high operating speed, micrometer size, and microwatt switching power.
- Demonstrated potential for wavelength conversion, pulse regeneration, and logical operations.
Conclusions:
- The novel photonic transistor offers a significant advancement over existing technologies.
- These devices present a highly attractive platform for future optical computing and signal processing.
- Potential for Transistor Figure-of-Merits exceeding current chi((3)) approaches by over 10(5) times.
Related Concept Videos
MOSFET: Enhancement Mode
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Field Effect Transistor
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Working Principle of BJT
A Bipolar Junction Transistor (BJT), specifically a PNP transistor in a common-base configuration, effectively amplifies or switches electronic signals by controlling the flow of charge carriers. This discussion focuses on its operation in the active mode.
In the PNP configuration, the emitter is heavily doped with positive charge carriers (holes), while the base is lightly doped with negative carriers (electrons). This setup allows for a forward bias across the emitter-base junction,...
In the PNP configuration, the emitter is heavily doped with positive charge carriers (holes), while the base is lightly doped with negative carriers (electrons). This setup allows for a forward bias across the emitter-base junction,...
