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Updated: Jun 28, 2026
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique
Ching-Shiun Chen1, Jarrn-Horng Lin, Tzu-Wen Lai
1Center for General Education, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-shan, Tao-Yuan, Taiwan 333, Republic of China. cschen@mail.cgu.edu.tw
Abstract:
An atomic layer epitaxy technique was used to produce nanoscale 2.9-3.4 nm copper particles supported on silica, and the nanoscale Cu/SiO2 catalysts can show surprisingly high activity for the water gas shift reaction, in comparison with the 5.6 wt% Pt/SiO2 and 10.3 wt% Cu/SiO2 prepared by the impregnation method.
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