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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
New boron nitride whiskers: showing strong ultraviolet and visible light luminescence
Ying-Chun Zhu1, Yoshio Bando, Dong-Feng Xue
1Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Abstract:
Boron nitride whiskers with a special structure have been synthesized by a thermal reaction process. The as-prepared BN whiskers have a length of tens of micrometers and a mean diameter of 500 nm. High-resolution TEM analysis shows that the as-prepared BN whiskers can be described as a nanofiber-interweaved network. Infrared and electron energy loss spectra reveal that the BN whiskers are composed of both sigma-sp2 and sigma-sp3 chemical bonds. The UV-vis absorption spectrum displays the energy band gap of the BN whiskers and multiple fine absorption peaks of the phonon-electron coupling. Both photoluminescence (PL) and cathodoluminescence (CL) measurements show the specially structured BN emits strong UV and visible luminescences, which is a promising material for deep-blue and UV applications.
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