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Updated: Jun 28, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Synthesis and strain relaxation of Ge-core/Si-shell nanowire arrays
Irene A Goldthorpe1, Ann F Marshall, Paul C McIntyre
1Materials Science and Engineering, Stanford University, Stanford, California 94305, USA. goldthorpe@stanford.edu
Abstract:
Analogous to planar heteroepitaxy, misfit dislocation formation and stress-driven surface roughening can relax coherency strains in misfitting core-shell nanowires. The effects of coaxial dimensions on strain relaxation in aligned arrays of Ge-core/Si-shell nanowires are analyzed quantitatively by transmission electron microscopy and synchrotron X-ray diffraction. Relating these results to reported continuum elasticity models for coaxial nanowire heterostructures provides valuable insights into the observed interplay of roughening and dislocation-mediated strain relaxation.
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