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Updated: Jun 27, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Structural, optical, and electrical properties of semiconducting ZnO nanosheets
Jae-Hwan Park1, Gyo-Sung Kang, Soon-Il Kwon
1Department of Electronic Engineering, Chungju National University, Chungju 380-702, Korea.
Abstract:
ZnO nanosheets were fabricated by an oxygen-assisted carbothermal reduction process and their properties were evaluated. In particular, the FET characteristics and photoluminescence properties of ZnO nanosheets were evaluated. The conduction type of ZnO nanosheets was determined as an n-type and the mobility was 20-40 cm2/ V-s, which is fairly high compared to ZnO nanowires. This might be attributed to the wide conduction area of ZnO nanosheet compared to nanowire structures and their better crystallinity.
