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Titanium dioxide thin films deposited by plasma enhanced atomic layer deposition for OLED passivation
Woong-Sun Kim1, Myoung-Gyun Ko, Tae-Sub Kim
1Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791, Republic of Korea.
Journal of Nanoscience and Nanotechnology
|December 4, 2008
Summary
Plasma enhanced atomic layer deposition (PEALD) created titanium dioxide films on polyethersulfon (PES) substrates. These films significantly improved organic light-emitting diode (OLED) lifetime and water vapor barrier properties.
Area of Science:
- Materials Science
- Thin Film Deposition
- Surface Engineering
Background:
- Polyethersulfon (PES) substrates require effective passivation for advanced electronic applications.
- Titanium dioxide (TiO2) is a promising material for protective coatings.
- Plasma-enhanced atomic layer deposition (PEALD) offers precise control over thin film properties.
Purpose of the Study:
- To investigate the PEALD of TiO2 thin films on PES substrates.
- To analyze the impact of plasma power on film characteristics and passivation performance.
- To evaluate the barrier properties and device lifetime enhancement offered by TiO2 coatings.
Main Methods:
- PEALD of TiO2 using Tetrakis dimethylamino titanium (TDMATi) and oxygen plasma.
- Deposition on PES substrates at 90°C.
- Characterization of film growth, water vapor transmission rate (WVTR), and organic light-emitting diode (OLED) device performance.
Main Results:
- Achieved a TiO2 growth rate of 0.8 Å/cycle.
- Demonstrated a low WVTR of 0.023 g/m² day for an 80 nm TiO2 film.
- Extended OLED device lifetime by 15 times (90 h) compared to uncoated devices.
Conclusions:
- PEALD of TiO2 provides excellent passivation for PES substrates.
- The deposited TiO2 films exhibit superior water vapor barrier properties.
- TiO2 coatings significantly enhance the operational stability and lifetime of OLED devices.
