Related Experiment Video

Updated: Jun 27, 2026

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers
12:20

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers

Published on: October 5, 2013

Structural influence on the magnetic and electronic properties of annealed Fe/Al multilayers

R Brajpuriya1, S Tripathi, A Sharma

  • 1University Grant Commission-Department of Atomic Energy Consortium for Scientific research, University Campus, Indore 452017, India.

Journal of Nanoscience and Nanotechnology
|December 4, 2008
PubMed

More Related Videos

Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains07:42

Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains

Published on: July 20, 2022

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

Related Concept Videos

Ferromagnetism01:31

Ferromagnetism

Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
π Electron Effects on Chemical Shift: Overview01:27

π Electron Effects on Chemical Shift: Overview

An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0, resulting in...
Magnetostatic Boundary Conditions01:28

Magnetostatic Boundary Conditions

An electric field suffers a discontinuity at a surface charge. Similarly, a magnetic field is discontinuous at a surface current. The perpendicular component of a magnetic field is continuous across the interface of two magnetic mediums. In contrast, its parallel component, perpendicular to the current, is discontinuous by the amount equal to the product of the vacuum permeability and the surface current. Like the scalar potential in electrostatics, the vector potential is also continuous...
Magnetic Fields01:27

Magnetic Fields

A moving charge or a current creates a magnetic field in the surrounding space, in addition to its electric field. The magnetic field exerts a force on any other moving charge or current that is present in the field. Like an electric field, the magnetic field is also a vector field. At any position, the direction of the magnetic field is defined as the direction in which the north pole of a compass needle points.
A magnetic field is defined by the force that a charged particle experiences...
Magnetic Susceptibility and Permeability01:31

Magnetic Susceptibility and Permeability

In linear magnetic materials, like paramagnets and diamagnets, magnetization is proportional to the magnetic field intensity. The constant of proportionality, a dimensionless number, is called magnetic susceptibility. The value of the susceptibility depends on the type of material.
When diamagnetic materials are placed under an external magnetic field, the moments opposite to the field are induced. Hence, the susceptibility for diamagnets has a minimal negative value of 10-5–10-6. Since...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...