Related Experiment Video
Updated: Jun 27, 2026
09:49
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Selectively-undercut traveling-wave electroabsorption modulators incorporating a p-InGaAs contact layer
Matthew M Dummer1, James R Raring, Jonathan Klamkin
1University of California Santa Barbara, ECE Department, Santa Barbara, CA 93106, USA. dummer@engineering.ucsb.edu
Optics Express
|December 10, 2008
Summary
A new fabrication method improves electroabsorption modulators (EAMs) for tunable lasers. Undercut etching enhances microwave performance and achieves a 34 GHz bandwidth, crucial for high-speed optical communications.
Area of Science:
- Optoelectronics
- Materials Science
- Semiconductor Devices
Background:
- Electroabsorption modulators (EAMs) are key components in optical communication systems.
- Existing fabrication processes can limit modulator performance, especially at high frequencies.
- Compatibility with tunable lasers is essential for advanced photonic integrated circuits.
Purpose of the Study:
- To develop a novel fabrication process for undercut-etched EAMs.
- To improve the microwave performance of EAMs while maintaining modulation efficiency.
- To enable integration with tunable lasers for high-speed applications.
Main Methods:
- Developed a novel fabrication process for undercut-etched EAMs.
- Incorporated a highly doped p-type InGaAs ohmic contact layer above the upper cladding.
- Utilized a traveling wave electrode design with an integrated, matched termination resistor.
Main Results:
- Achieved significant improvement in microwave performance due to undercut etching.
- Demonstrated minimal impact on modulation efficiency despite undercut etching.
- Attained a 34 GHz 3-dB bandwidth for a 600 micrometer long modulator.
Conclusions:
- The novel fabrication process is compatible with tunable lasers.
- Undercut etching is an effective technique for enhancing EAM microwave performance.
- The developed EAMs are suitable for high-speed optical modulation applications.
