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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Joule-Thomson Effect01:21

Joule-Thomson Effect

The Joule-Thomson effect, also known as the Joule-Kelvin effect, describes the temperature change of a fluid when it is forced through a valve or porous plug while keeping it in a thermally insulated environment. This experiment is called a throttling process. This is an important effect widely used in refrigeration and the liquefaction of gases.
This experiment forces high-pressure gas through a throttle valve or a porous plug to a lower-pressure region. The gas expands as it passes through to...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Junction Potentials in Galvanic Cells01:21

Junction Potentials in Galvanic Cells

The Nernst equation, derived under the assumption of thermodynamic equilibrium, calculates the electromotive force (emf) as the sum of potential differences at phase boundaries in a reversible cell without a liquid junction. However, in irreversible cells such as the Daniell cell, an additional potential difference named the liquid-junction potential (EJ) arises across the interface of two electrolyte solutions due to different ion diffusion rates. This EJ represents the potential difference...

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Asymmetric Thermoelectrochemical Cell for Harvesting Low-grade Heat under Isothermal Operation
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Thermoelectric effects in nanoscale junctions.

Yonatan Dubi1, Massimiliano Di Ventra

  • 1Department of Physics, University of California San Diego, La Jolla, California 92093-0319, USA. dubij@physics.ucsd.edu

Nano Letters
|December 17, 2008
PubMed
Summary
This summary is machine-generated.

Thermoelectric effects in nanoscale systems exhibit unexpected resonant structures and sign sensitivity when considering their dynamic interaction with thermal baths. This research reveals violations of Fourier

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Area of Science:

  • Quantum thermodynamics
  • Condensed matter physics
  • Nanoscale energy transport

Background:

  • Thermoelectricity in nanoscale systems is often simplified using static models.
  • These models neglect the crucial dynamical interactions with thermal baths.
  • Understanding nonequilibrium effects is vital for nanoscale energy devices.

Purpose of the Study:

  • To investigate thermoelectricity in nanoscale systems by incorporating dynamical interactions.
  • To explore emergent phenomena arising from the nonequilibrium nature of these systems.
  • To define and analyze local temperature variations and their implications.

Main Methods:

  • Utilizing the theory of open quantum systems.
  • Analyzing the dynamical interaction between the nanoscale system and thermal baths.
  • Developing a framework to define and study local temperature.

Main Results:

  • Emergence of resonant structures and significant sign sensitivity in thermoelectric properties.
  • Observation of local temperature 'hot spots' and oscillations.
  • Demonstration of the violation of Fourier's law at the nanoscale.

Conclusions:

  • The nonequilibrium nature of nanoscale thermoelectricity leads to novel phenomena.
  • Local temperature is not uniform and can exhibit complex behavior.
  • Established macroscopic laws like Fourier's law may not apply universally at the nanoscale.