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Updated: Jun 27, 2026

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
Published on: December 3, 2013
[Raman spectra studies of MBE-grown n-GaAs/SI-GaAs films]
Bin Wang1, Xiao-xuan Xu, Zhe Qin
1TEDA Applied Physics School, Nankai University, Tianjin 300457, China.
Abstract:
n-GaAs films doped with Si were grown by MBE on semi-insulated GaAs (100) substrates. The films with different doping concents were characterized by Raman spectra at room temperature. It is obviously that the Raman peaks shifted. Some peaks were enhanced and some were weakened. This is attributed to the fact that the higher the doping contents, the highertge lattice mismatch. And the lattice misfit induced the imperfection in epitaxy layers. This experimental result coincides with the theory.
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