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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

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Published on: November 2, 2013

Quantum dot behavior in graphene nanoconstrictions.

Kathryn Todd¹, Hung-Tao Chou, Sami Amasha

¹Department of Physics and Department of Applied Physics, Stanford University, Stanford, California, 94305, USA.

|December 23, 2008

Summary

This summary is machine-generated.

Transport in graphene nanoribbons is clarified by studying quantum dots. Shorter ribbons show single/double quantum dots, while longer ones exhibit multiple quantum dots, suggesting disorder-nucleated transport.

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Area of Science:

Condensed Matter Physics
Materials Science
Nanotechnology

Background:

Graphene nanoribbons (GNRs) exhibit a transport gap, but the underlying mechanisms remain unclear.
Understanding transport properties is crucial for GNR-based electronic devices.

Purpose of the Study:

To investigate the influence of nanoribbon length on charge transport.
To elucidate the role of quantum dots in GNR conductivity.
To propose a model explaining transport phenomena in GNRs.

Main Methods:

Fabrication and electrical transport measurements of graphene nanoribbon devices with varying lengths.
Analysis of transport characteristics in short (<60 nm) and long (>=250 nm) nanoribbons.
Correlation of quantum dot behavior with nanoribbon constriction width.

Main Results:

Longer GNRs (>250 nm) demonstrate transport through multiple quantum dots connected in series.
Shorter GNRs (<60 nm) exhibit transport behavior consistent with single and double quantum dots.
Quantum dot size appears to scale with the constriction width of the nanoribbon.

Conclusions:

Transport in GNRs is mediated by quantum dots nucleated by background disorder within a confinement gap.
The observed length-dependent behavior highlights the importance of quantum confinement and disorder in GNR transport.
The findings provide a new model for understanding charge transport in disordered graphene nanoribbons.