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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Published on: July 24, 2015

Chemical doping and electron-hole conduction asymmetry in graphene devices

Damon B Farmer1, Roksana Golizadeh-Mojarad, Vasili Perebeinos

  • 1IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA.

Nano Letters
|December 24, 2008
PubMed

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