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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 2, 2013
Stable scaffolds for reacting Si nanowires with further organic functionalities while preserving Si-C passivation of
Ossama Assad1, Sreenivasa Reddy Puniredd, Thomas Stelzner
1The Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa 32000, Israel.
Journal of the American Chemical Society
|December 26, 2008
Abstract:
We report on Si NWs modified by covalent scaffolds, via SiC bonds, that give nearly full coverage of the Si atop sites and, at the same time, provide a route for subsequent functionalization. The obtained CH(3)CHCHSi NWs exhibit superior oxidation resistance over Si NWs that are modified with CH(3) or CH(3)CC functionalities, which give nearly full coverage of the Si atop site too.
