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Multilayer structure for a spectral imaging sensor.

Pascale Parrein1, Norbert Moussy, Ludovic Poupinet

  • 1Commissariat à l'Energie Atomique, Laboratoire d'Electronique et de Technologie de l'Informaion, MINATEC, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France.

Applied Optics
|January 20, 2009
PubMed
Summary

This study demonstrates a novel multilayer structure for spectral information recovery. Microelectronic fabrication enables photoabsorbing layers to detect light wavelengths, enabling spectral analysis.

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Microelectronics

Background:

  • Spectral information recovery is crucial for various applications.
  • Existing methods may have limitations in terms of integration and resolution.
  • Microelectronics offer potential for compact and scalable solutions.

Purpose of the Study:

  • To investigate a multilayer structure for spectral information recovery.
  • To develop a model for predicting detected signals within the structure.
  • To validate the model using hydrogenated amorphous silicon (a-Si:H) p-i-n diodes.

Main Methods:

  • Fabrication of a multilayer structure with alternating photoabsorbing and transparent layers on a reflective surface.
  • Modeling the generation and detection of stationary waves, considering absorption and multireflections.
  • Experimental validation using a-Si:H p-i-n diodes with varying thicknesses and indium tin oxide (ITO) electrodes.

Main Results:

  • The detected signal is dependent on incident light wavelength, detector thickness, and layer position.
  • Each photoabsorbing layer exhibits a specific spectral response.
  • Spectral information retrieval is demonstrated within the visible spectrum range.

Conclusions:

  • The proposed multilayer structure effectively recovers spectral information.
  • Microelectronics technology enables the realization of such spectral sensing devices.
  • This approach offers a pathway for integrated spectral analysis.