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Updated: Jun 25, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Growth mechanism and internal structure of vertically aligned single-walled carbon nanotubes
Erik Einarsson1, Masayuki Kadowaki, Kazuaki Ogura
1Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
Abstract:
An in situ optical absorbance technique was used to monitor the growth of vertically aligned single-walled carbon nanotubes (VA-SWNTs) at various temperatures and pressures. The effects of the growth temperature and ethanol pressure on the initial growth rate and catalyst lifetime were investigated. It was found that the ideal pressure for VA-SWNT synthesis changes with the growth temperature, shifting toward higher pressure as the growth temperature increases. It was also found that the growth reaction is first-order below this ideal pressure. Additionally, the internal structure of the VA-SWNT film was observed at different depths into the film by transmission electron microscopy. The absence of large bundles was confirmed, and little change in the structure was observed to a depth of approximately 1 microm.
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