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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Konstantin V Romanenko1, P F de J Cano-Barrita, Bruce J Balcom
1MRI Centre, Department of Physics, University of New Brunswick, P.O. Box 4400, Fredericton, NB, Canada E3B 5A3.
This study introduces an efficient magnetic resonance imaging (MRI) technique for quantitative density profiling of fast-relaxing samples. The novel method significantly enhances sensitivity and can reduce experiment times by up to 100-fold.
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