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Growth and luminescence of N doped TiO2 nanowires
D Maestre1, A Cremades, L Gregoratti
1Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, 28040 Madrid, Spain.
Abstract:
Titanium oxide nanowires have been grown by thermal treatment of pressed TiN powder under argon or N2 flow. It has been found that two-step treatments at two different temperatures, 400 degrees C and 800 degrees C, lead to the growth of nanowires all over the sample surface. The nanowires are of single crystalline rutile structure. Energy dispersive X-ray spectroscopy and photoelectron spectroscopy measurements show that the oxide nanostructures contain N from the starting nitride. The mechanism of N incorporation into the oxide and its possible effect on the luminescence are discussed.
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