Related Experiment Video

Updated: Jun 25, 2026

Nanoscale Characterization of Liquid-Solid Interfaces by Coupling Cryo-Focused Ion Beam Milling with Scanning Electron Microscopy and Spectroscopy
11:03

Nanoscale Characterization of Liquid-Solid Interfaces by Coupling Cryo-Focused Ion Beam Milling with Scanning Electron Microscopy and Spectroscopy

Published on: July 14, 2022

Long-range electron interferences at a metal surface induced by buried nanocavities

O Kurnosikov1, J H Nietsch, M Sicot

  • 1Department of Applied Physics, cNM, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands.

Physical Review Letters
|March 5, 2009
PubMed

More Related Videos

Probing Surface Electrochemical Activity of Nanomaterials using a Hybrid Atomic Force Microscope-Scanning Electrochemical Microscope (AFM-SECM)08:31

Probing Surface Electrochemical Activity of Nanomaterials using a Hybrid Atomic Force Microscope-Scanning Electrochemical Microscope (AFM-SECM)

Published on: February 10, 2021

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires09:00

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Published on: December 11, 2013

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Standing Waves in a Cavity01:28

Standing Waves in a Cavity

A household microwave and lasers are examples of standing electromagnetic waves in a cavity. When two conducting metal plates are placed parallel at the nodal planes, it creates a cavity where standing waves are formed. The cavity between the two planes is analogous to a stretched string held at the points x = 0 and x = L. Here, the distance 'L' between the two planes must be an integer multiple of half of the wavelength. The wavelengths that satisfy this condition are given by: