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Updated: Jun 25, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

First-principles study of electron linewidths in graphene

Cheol-Hwan Park1, Feliciano Giustino, Catalin D Spataru

  • 1Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA.

Physical Review Letters
|March 5, 2009
PubMed
Summary

First-principles calculations reveal electron-electron and electron-phonon interactions significantly impact quasiparticle linewidths in n-doped graphene. These combined interactions accurately explain experimental photoemission data.

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