The effect of morphology on electron field-effect mobility in disordered c60 thin films

We present a model of polycrystalline C60 field-effect transistors (FETs) that incorporates the microscopic structural and electronic details of the C60 films. We generate disordered polycrystalline thin films by simulating the physical-vapor deposition process. We simulate electron hopping transport using a Monte Carlo method and electronic structure calculations. Our model reproduces experimentally observed FET characteristics, including electrical characteristics, electrochemical potentials, and charge mobilities. Our results suggest that even relatively disordered films have charge mobilities that are only a factor of 2 smaller than mobilities in single crystals.