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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy

Yijun Zhang1, Benkang Chang, Zhi Yang

  • 1Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China.

Applied Optics
|March 24, 2009
PubMed

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