Application of neutron transmutation doping method to initially p-type silicon material.

Area of Science:

• Materials Science
• Nuclear Engineering
• Semiconductor Physics

Background:

• Neutron transmutation doping (NTD) is a key method for producing high-purity silicon.
• Current NTD applications primarily focus on n-type silicon.
• Extending NTD to p-type silicon requires specific process optimization.

Purpose of the Study:

• To investigate and establish a practical methodology for neutron transmutation doping of initially p-type silicon.
• To determine the relationship between neutron irradiation fluence and the final electrical resistivity.
• To analyze factors affecting the NTD process in p-type silicon.

Main Methods:

• Application of the neutron transmutation doping (NTD) method to initially p-type silicon ingots.
• Irradiation with neutron fluence at the HANARO research reactor.
• Measurement and analysis of the final electrical resistivity of doped silicon.

Main Results:

• A proportional constant of 2.3473x10^19 nΩcm⁻¹ was determined for neutron fluence and resistivity.
• Final resistivity deviations from the target were within -5% to 2% for most samples.
• The study analyzed boron impurity burn-up, residual 32P activity, and compensation effects.

Conclusions:

• A practical and reliable methodology for neutron transmutation doping of p-type silicon has been successfully established.
• The findings facilitate the expansion of NTD applications to p-type silicon at HANARO.
• Optimized NTD processes ensure precise control over silicon resistivity for advanced semiconductor applications.