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Updated: Jun 24, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
Published on: August 8, 2025
Fabrication and characterization of nanoscale resonant gratings on thin silicon membrane
Yongjin Wang1, Yoshiaki Kanamori, Jiasheng Ye
1Department of nanomechanics, Tohoku University, Sendai, Japan. wang@hane.mech.tohoku.ac.jp
Abstract:
We report the design and fabrication of nanoscale resonant gratings which is of interest for narrow bandwidth filtering application. The linear/circular grating structures, of which the grating width is 200nm and the grating height is 260nm, are generated on silicon-on-insulator wafer. Nanoscale gratings are fabricated on the silicon device layer by a combination of electron beam lithography and fast atom beam etching. The silicon handle layer under grating region is removed by deep reactive ion etching, and the buried oxide layer is kept. The reflectance measurements are performed to characterize the optical response of fabricated freestanding nanoscale gratings. The resonant behavior of linear gratings agrees with the theoretical predication, and the polarization-independent responses of circular gratings are also experimentally demonstrated.

